首页 | 本学科首页   官方微博 | 高级检索  
     

微处理器中子单粒子效应测试系统设计与试验研究
引用本文:段丙皇,杜川华,朱小锋,李悦,陈泉佑.微处理器中子单粒子效应测试系统设计与试验研究[J].原子能科学技术,2022,56(4):734-741.
作者姓名:段丙皇  杜川华  朱小锋  李悦  陈泉佑
作者单位:中国工程物理研究院 电子工程研究所,四川 绵阳621999;中国科学院 国家空间科学中心,北京100190
基金项目:国家自然科学基金(12005200,11705172);
摘    要:为开展微处理器的空间大气中子单粒子效应研究,以一款TI公司65 nm CMOS工艺的微处理器为研究对象,研制了一套微处理器中子单粒子效应测试系统。该测试系统可实现对被测微处理器的单粒子翻转、单粒子功能中断和单粒子闩锁效应的实时监测。利用加速器中子源,对该微处理器开展14 MeV中子辐照试验。试验结果表明,中子注量累积达3?5×1011 cm-2时,该器件未发生单粒子锁定效应。但总线通信、模数转换等功能模块发生了多次单粒子功能中断,其中集成总线通信接口模块为最敏感单位,试验获得的器件中子单粒子效应截面为6?6×10-11 cm2。

关 键 词:微处理器    中子单粒子效应    14  MeV中子    测试系统

Design and Test of Neutron-induced Single Event Effect Monitoring System on Microprocessor
DUAN Binghuang,DU Chuanhua,ZHU Xiaofeng,LI Yue,CHEN Quanyou.Design and Test of Neutron-induced Single Event Effect Monitoring System on Microprocessor[J].Atomic Energy Science and Technology,2022,56(4):734-741.
Authors:DUAN Binghuang  DU Chuanhua  ZHU Xiaofeng  LI Yue  CHEN Quanyou
Affiliation:Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China;National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
Abstract:Cosmic rays interact with atmospheric atoms to generate high?energy neutron radiation, which threats to the electronic system working in the atmospheric space environment. Neutron?induced single event effect (SEE) occurring in the key component of an electronic system (i.e. microprocessor) seriously affects the system reliability. To study neutron?induced SEE of microprocessor, a SEE monitoring system was designed for a 65 nm CMOS microprocessor from Texas Instruments (TI). The designed system has the ability to monitor SEE events that occur in tested microprocessor, and record corresponding voltage/current change in real time. To minimize the irradiation?caused disturbance in monitoring system, it consists of two modules connected with 1?2 m communication line in irradiation room. One module carrying tested microprocessor is placed close to the neutron source. Another module acting as the master control board is placed as far away from the neutron source and is shielded against gamma ray with lead bricks. The upper order computer and 24 V direct?current (DC) power supply are placed outside of the irradiation room. As a key component of the SEE monitoring system, the master control board is composed of microcontroller unit (MCU), power management chip, operating voltage/current monitor and peripheral circuit. The master control board is able to continuously monitor the internal operating status of the tested microprocessor and the voltage/current fluctuation. The 24 V input voltage is converted into two?way power supplies. One is used for monitoring MCUs on master control board. Another one is used for the device under test (DUT). Operating voltage/current values are transferred to the upper order computer through a serial port. When the detected voltage or current values exceed set thresholds, monitoring MCU would cut off power supply through a relay. The SEE monitoring system was test using 14 MeV neutrons produced by D?T reactions. Single event functional interrupt (SEFI) was observed in inter?integrated circuit (I2C), internal flash memory, analog?to?digital converter (ADC), arithmetic and logic unit (ALU), controller area network (CAN), general?purpose input/output (GPIO) and other units, while single event latch up (SEL) is not detected. I2C is found to be the most sensitive unit. Neutron?induced SEE in I2C bus leads to a significant operating current drop. Moreover, when one of eight tested I2C buses is blocked under neutron irradiation, the following tests for rest I2C bus will turn out to be “FAIL” too, which implies the SEE might occur at the control part of I2C. The SEE cross?section of tested microprocessor is evaluated to be 6?6×10-11 cm2 with the data of neutron fluence up to 3?5×1011 cm-2.
Keywords:microprocessor                                                                                                                        neutron-induced single event effect                                                                                                                        14 MeV neutron                                                                                                                        testing system
点击此处可从《原子能科学技术》浏览原始摘要信息
点击此处可从《原子能科学技术》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号