电子辐照GaInP/GaAs/Ge三结太阳电池少子寿命的变化

为研究电子辐照空间太阳电池的损伤机制，对电子辐照GaInP/GaAs/Ge三结太阳电池进行了光致发光谱测量，分析了GaInP顶电池及GaAs中间电池发光强度随电子注量的变化规律。利用辐射效率关系对归一化发光强度随电子辐照注量的变化进行了拟合，分别得到了GaInP顶电池及GaAs中间电池在不同辐照条件下的少子非辐射复合寿命τ_nr，通过对比辐照前后少子非辐射复合寿命的衰降变化，发现GaInP顶电池的抗辐照性能优于GaAs中间电池。

Electron-irradiated Induced Change of Minority Carrier Lifetime of GaInP/GaAs/Ge Triple-junction Solar Cell

In order to study the electron irradiation effect on space solar cells, electron-irradiated induced change of minority carrier lifetime of GaInP/GaAs/Ge triple-junction solar cells was investigated by using photoluminescence (PL) measurements. The variation of PL intensities of GaAs mid-cell and GaInP top-cell with electron fluence was analyzed. The normalized luminescence intensity was fitted with the change of the electron fluence. The minority carrier non-radiative recombination lifetimes of GaInP top-cell and GaAs mid-cell with electron fluence were obtained, respectively. Furthermore, by comparing the non-radiative recombination lifetimes of minority carrier before and after irradiation, it is found that the radiation resistance of GaInP top-cell is better than that of GaAs mid-cell.