对改性晶圆上制备的PDSOI NMOS器件热载流子效应的全面认识

通过与常规器件的对比，本文详细研究了在硅离子注入改性晶圆上制备的PDSOI NMOS的热载流子诱导退化现象。理论分析和TCAD模拟结果表明，硅离子注入在埋氧层中引入的电子陷阱能够捕获注入的电子，并通过改变电场来影响氧化层的热载流子退化。在不同的应力条件下，其效果也有所不同。对改性器件施加热载流子应力时，改性器件的前栅和背栅之间存在着更明显的相互作用。同时，探讨了总剂量辐照对改性器件热载流子退化的影响。在改性器件中存在辐照增强的热载流子退化，高温退火只能部分消除这一影响。

Comprehensive Understanding of Hot Carrier Effect of PDSOI NMOS Devices Fabricated on Modified Wafer

The hot carrier induced degradation of PDSOI NMOS devices fabricated on wafers modified by silicon ions implantation was elaborately studied in this paper in comparison with conventional devices. Theoretical analysis and TCAD simulation results show that the electron traps in the buried oxide layer induced by silicon ions implantation can capture the injected electrons and affect the intensity of impact ionization and hot carriers injection by altering the electric field. Meantime, the effect varies in different stress conditions. When hot carrier stress is applied to the modified device, there is a more significant interaction between the front and back gates of the modified device. The effect of total dose irradiation on the hot carrier degradation was also explored. The radiation enhanced hot carrier degradation also occurs in the modified devices and high temperature annealing can only partially eliminate this effect.