基于高温抗辐照SOI CMOS工艺的器件特性研究

绝缘体上硅（SOI）技术因其独特的优势而广泛应用于辐射和高温环境中，研究不同顶层硅膜厚度（tSi）的器件特性，对进一步提升高温抗辐照SOI CMOS器件的性能至关重要。本工作首先通过工艺级仿真构建了N沟道金属氧化物半导体场效应晶体管（NMOSFET）的模型，并对其进行了分析，基于仿真结果，采用015 μm抗辐照SOI CMOS工艺制备出具有不同硅膜厚度的实际器件，该工艺针对高温应用引入了设计与材料的优化。结果表明，薄硅膜和厚硅膜NMOSFET在150 krad(Si) 总剂量辐射下表现出相近的抗辐照加固性能，而前者在225 ℃高温下具有较小的漏电流，因此具有较薄硅膜的NMOSFET更适用于高温电子器件的制造。

Study on Device Characteristics of High-temperature Radiation-hardened SOI CMOS Process

Because of the unique advantages of silicon-on-insulator (SOI) technology in both radiation and high temperature environments, it is meaningful to investigate the characteristics of SOI device with different top silicon film thicknesses (tSi), which will be of great value to further enhance the performance of high temperature radiation hardened SOI complementary metal oxide semiconductor (CMOS) device. Firstly, a model of N channel metal oxide semiconductor field effect transistor (NMOSFET) is constructed and analyzed by process level simulation. Based on the simulation data, actual devices with different tSi are manufactured by using 015 μm radiation hardened SOI CMOS process that employs design and materials optimized for high temperature applications. The results indicate that both thin and thick tSi NMOSFET show approximate hardness performance under 150 krad(Si) total dose radiation, while the former has smaller leakage current at 225 ℃, making the NMOSFET with thinner tSi a better candidate for high-temperature electronics.