| Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films |
| |
| 作者姓名： | 陈玲玲 程珊华 辛煜 宁兆元 许圣华 陈军 |
| |
| 作者单位： | DepartmentofPhysics,Suzhouuniversity,Suzhou215006,China |
| |
| 基金项目： | The project supported by the National Nature Science Foundation of China (No. 10175048) |
| |
| 摘 要： | Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500℃ in vacuum ambience inorder to investigate the relationship of their thermal stability, optical and electrical propertieswith deposition temperature. Results indicate that the films deposited at high temperature have a less CFx bonding and a more cross-linking structure thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.
|
| 关 键 词： | 沉积 温度 电子回旋加速器 真空 氟化碳 |
Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films |
| |
| Chen Lingling Cheng Shanhua Xin Yu,Ning Zaoyuan Xu Shenghua Chen Jun.Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films[J].Plasma Science & Technology,2003,5(5):1977-1982. |
| |
| Authors: | Chen Lingling Cheng Shanhua Xin Yu Ning Zaoyuan Xu Shenghua Chen Jun |
| |
| Affiliation: | Chen Lingling Cheng Shanhua Xin Yu
Ning Zaoyuan Xu Shenghua Chen Jun
Department of Physics,Suzhou university,Suzhou 215006,China |
| |
| Abstract: | Fluorinated amorphous carbon films (a-C:F) were prepared at different temperaturesusing a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactorwith CHF3 and C2H2 as source gases. Films were annealed at 500 ℃ in vacuum ambience inorder to investigate the relationship of their thermal stability, optical and electrical propertieswith deposition temperature. Results indicate that the films deposited at high temperature havea less CFx bonding and a more cross-linking structure thus a better thermal stability. They alsohave a lower bandgap, higher dielectric constant and higher leakage current. |
| |
| Keywords: | fluorinated amorphous carbon film deposition temperature FTIR optical band gap |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
