| 压力对立方氮化硼复合片耐磨性和导电性的影响 |
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| 引用本文： | 姜伟,盘瑛,李立惟,林峰.压力对立方氮化硼复合片耐磨性和导电性的影响[J].珠宝科技,2011(3):16-18. |
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| 作者姓名： | 姜伟 盘瑛 李立惟 林峰 |
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| 作者单位： | [1]桂林特邦新材料有限公司,桂林541004 [2]桂林电子科技大学信息科技学院,桂林541004 [3]国家特种矿物材料工程技术研究中心,桂林541004 |
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| 基金项目： | 桂科攻（099600509321064）; 桂科自（0832004Z） |
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| 摘 要： | 文章分析了合成压力对立方氮化硼复合片耐磨性和导电性的影响。在固定其他因素,采用六个不同的压力合成立方氮化硼复合片,分别对其进行磨耗比检测和电阻检测。分析发现,随着合成压力的递升,磨耗比逐渐增大,当增加到5.6GPa后磨耗比再无明显变化;而电阻值随着压力的增加反而降低。合成压力的增加,有利于氮化硼颗粒的破碎重排分布,增加了氮化硼颗粒与粘接剂间的接触,进一步提高了其相对密度,表现为磨耗比的提高和导电性的增加。
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| 关 键 词： | 立方氮化硼复合片 耐磨性 导电性 |
Influence of synthetic pressure on wear resistance and electric conductivity of PcBN compacts |
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| JIANG Wei,PAN Ying,LI Li-wei,LIN Feng.Influence of synthetic pressure on wear resistance and electric conductivity of PcBN compacts[J].Jewellery Science and Technology,2011(3):16-18. |
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| Authors: | JIANG Wei PAN Ying LI Li-wei LIN Feng |
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| Affiliation: | 1.Guilin Tebon Superhard Material Co.Ltd.,Guilin,541004,China; 2.National Special Mineral Materials Engineering Research Center,Guilin 541004,China; 3.Institute of Information Technology,Guilin University of Electronic Technology,Guilin 541004,China) |
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| Abstract: | Influences of synthesis pressure change on wear resistance and electric conductivity of PcBN compacts are analyzed in this paper.The PcBN compacts are synthesized during six different pressure processes while other factors are same.Then the wear ratio and resistance of PcBN compacts are tested.It is found that the PcBN wear ratio is improved while increasing synthetic pressure.But the wear ratio is not changed obviously after increasing the pressure to 5.6GPa.Furthermore the PcBN resistance value is decreased during this synthetic process.Synthetic PcBN pressure is improved which is propitious to cBN grain fragmentation and fine.Meanwhile these cBN grains are distributed again.This changed process improves PcBN relative density.So its wear ratio and electric conductivity are improved. |
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| Keywords: | polycrystalline cubic boron nitride compacts wear resistance electric conductivity |
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