Interference photolithography with the use of resists on the basis of chalcogenide glassy semiconductors |
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Authors: | V A Dan’ko I Z Indutnyi V I Min’ko P E Shepelyavyi |
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Affiliation: | (1) Institute of Solid State Physics, University of Latvia, 8 Kengaraga St., 1063 Riga, Latvia |
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Abstract: | The use of chalcogenide glassy semiconductors as an inorganic vacuum photoresist to obtain periodic relief structures on substrates
of various compositions is investigated. It is shown that a chalcogenide resist can be successfully used in combination with
interference lithography (including the immersion one) to form one- and two-dimensional submicron-size periodic structures
with a spatial frequency of 300 to 8000 mm−1. Technological processes of obtaining relief structures and lithographic masks with submicron sizes of elements on semiconductor,
dielectric and metal substrates are developed, and their possible applications are described. |
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