Mg在GaP材料中掺杂行为的SIMS分析

Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revaporization from the growth surface under the higher temperature and the Mg electrical activity decreases with increasing cP2Mg flowrate. The activation energy of Mg in GaP is also respectively obtained.