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分离式片上微摩擦测试机构及其制作
引用本文:郭占社,姜春福,张欲晓,郑德智.分离式片上微摩擦测试机构及其制作[J].中国机械工程,2007,18(21):0-2631.
作者姓名:郭占社  姜春福  张欲晓  郑德智
作者单位:1. 北京航空航天大学,北京,100083
2. 北京信息高技术研究所,北京,100085
摘    要:为有效模拟基于单晶硅材料的微机电器件摩擦副的摩擦磨损状况,设计了一种分离式片上微摩擦测试机构。该测试机构利用微机电系统体硅工艺及键合技术,把加载机构、测试机构、摩擦副以及力传感器集成在一个单一的硅片上。对该机构的测试结果表明:摩擦副之间的静摩擦因数约为0.9,动态摩擦因数随着施加在摩擦副上正压力的变化而变化。

关 键 词:片上微摩擦测试机构  体硅工艺  键合技术  动态摩擦因数  静态摩擦因数
文章编号:1004-132X(2007)21-2539-04
修稿时间:2006-08-28

An On-chip Micro-tribotester and Its Micro-fabrication
Guo Zhanshe,Jiang Chunfu,Zhang Yuxiao,Zheng Dezhi.An On-chip Micro-tribotester and Its Micro-fabrication[J].China Mechanical Engineering,2007,18(21):0-2631.
Authors:Guo Zhanshe  Jiang Chunfu  Zhang Yuxiao  Zheng Dezhi
Affiliation:1. Beihang University, Beijing, 100083 ;2. Beijing Institute of information Technology, Beijing, 100085
Abstract:An on-chip micro-tribotester was designed and fabricated to simulate the tribolgical properties for the lateral contact surfaces of MEMS devices.The loading structure,testing part and force sensors were all integrated on a single chip by bulk silicon technology and bonding process.It is verified from the tested results that the static frictional coefficient between the contact pairs is 0.9 and dynamic frictional coefficient varies with normal force.
Keywords:on-chip micro-tribotester  bulk silicon technology  bonding process  dynamic frictional coefficient  static frictional coefficient
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