New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation |
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| Authors: | M P&#;USKA A CZERWINSKI J RATAJCZAK J K&#;TCKI L MARONA† R CZERNECKI† M LESZCZY&#;SKI† & P PERLIN† |
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| Affiliation: | Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;Institute of High Pressure Physics "Unipress", Sokołowska 29/37, 01-142 Warsaw, Poland |
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| Abstract: | Cathodoluminescence (CL) studies are widely applied in semi-conductor science and technology. However, for structures with a p-n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells. |
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| Keywords: | Cathodoluminescence InGaN lasers semi-conductors |
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