QE、LBIC和I-V对铸造多晶硅、单晶硅太阳电池的表征

分析了三种不同类型的商业太阳电池片-P 型铸造多晶硅太阳电池，定边喂膜生长硅(EFG)太阳电池 和单晶硅太阳电池的光谱响应（外量子效率EQE），光束诱导电流（LBIC）和暗电流-电压(I-V)，光照I-V 曲线。在I-V 特性测试中，利用太阳电池的二极管等效模型从测量数据中得出重要的电池参数，例如串联 电阻，并联电阻，二极管理想因子，暗饱和电流等。通过光谱响应和LBIC 测试，分析影响这些参数的可 能性缺陷。在铸造多晶硅、EGF 太阳电池中影响电池参数的主要缺陷是晶界以及位错以及材料中杂质，而 对于单晶硅来说，主要的却是存在于体内的金属杂质等。

Characterization of crystalline silicon solar cells by electrical parameters

Three types of industrial silicon solar cells: P-type of cast-multicrystlline silicon, edge-defined film-fed growth (EFG) and single silicon solar cells have been analyzed, using spectral response (external quantum efficiency, EQE), light beam induced current (LBIC) and dark and illuminated current-voltage measurement (I-V). The diode equivalent model solar cells allows to deduce, from measured data, important cell parameters such as the ideality factors of diodes n, the saturation currents I0 and the parasitic resistance RS and RSH. The type of extended defect are discussed which effect these cells parameters in terms of the result of EQE and LBIC. For cast-multicrystlline silicon and EFG solar cells, the grain boundaries, dislocation and impurity in bulk silicon can be accounted for the degradation of cell parameter, but for single silicon solar cells maybe born-oxygen defect pairs.