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氧离子辅助法沉积ITO透明导电膜的研究
引用本文:初国强,王子君,赵家民,刘毅南,刘云,刘星元,王立军.氧离子辅助法沉积ITO透明导电膜的研究[J].光学精密工程,2001,9(2):169-173.
作者姓名:初国强  王子君  赵家民  刘毅南  刘云  刘星元  王立军
作者单位:中国科学院
基金项目:高等学校重点实验室访问学者基金资助
摘    要:论述了ITO膜的导电及生长机理,讨论了离子辅助(IAD)电子枪蒸镀ITO膜的方法中,膜的组分、氧分压、衬底温度和蒸发速率等几个参数对ITO膜光电性能的影响,在选择合适的工艺条件下制备ITO膜,电阻率约3×10-4Ω·cm,可见光平均透过率高于80%。并用原子力显微镜(AFM)对溅射及蒸发膜进行了表面面型测试。

关 键 词:离子辅助沉积  ITO膜  电子束  氧空位  原子力显微镜
文章编号:1004-924X(2001)02-0169-05
收稿时间:2000-12-01
修稿时间:2000年12月1日

Transparent conductive film (ITO) deposited by IAD
CHU Guo-qiang,Wang Zi-jun,ZHAO Jia-min,LIU Yi-nan,LIU Yun,LIU Xing-yuan,WANG Li-jun.Transparent conductive film (ITO) deposited by IAD[J].Optics and Precision Engineering,2001,9(2):169-173.
Authors:CHU Guo-qiang  Wang Zi-jun  ZHAO Jia-min  LIU Yi-nan  LIU Yun  LIU Xing-yuan  WANG Li-jun
Affiliation:Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130022, China
Abstract:In addition to describing the conduction- and growing-mechanism of ITO films, the paper also discusses the influence of the ratio of indium to tin, the oxygen partial pressure, the substrate temperature and the evaporation rate on electrical and optical properties of the ITO films prepared by ion aided deposition. Under the optimized preparation conditions, electrical resistivity is about 3.0×10-4cm, and the average visible transmittance is better than 80%. By an atomic force microscope, the surface of the film had been examined.
Keywords:ITO films  ion aided deposition  oxygen vacancies  vapour partial pressure  atomic force microscopes
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