基于Zn2SiO4:Mn的硅基成像器件紫外响应增强薄膜制备及其表征

为了增强CCD、COMS等硅基光电成像器件的紫外响应，在其光敏面镀上“紫外—可见”变频薄膜将紫外光变为可见光，以实现CCD、COMS等硅基光电成像器件的紫外响应。 Zn2SiO4:Mn由于粒子直径小，稳定性好，荧光量子效率高等优点，在增强光电器件紫外响应领域有着很广泛的应用前景。现用“旋涂法”法在石英基底上生成 Zn2SiO4:Mn紫外增强薄膜，并对其透射光谱、吸收光谱、激发光谱与发射光谱等光学性质进行测量分析。实验测得薄膜在300nm以下透过率极低，在300nm以上透过率很高且平稳；对300nm以下的光具有很强的吸收，对300nm以上的光吸收很弱且很平稳；激发峰在265nm,发射峰在525nm,即能将紫外光转化为可见光。同时分析了Zn2SiO4:Mn 薄膜的均匀性、厚度、稳定性等物理性质对其变频性能的影响，可知Zn2SiO4:Mn 薄膜是一种可用于增强CCD等光电器件紫外响应的紫外增强薄膜。

Preparation and UV-enhanced properties of Zn2SiO4:Mn thin-films used to CCDS

In order to enhance the UV-response of CCD &; CMOS sensors,an piece of UV-enhanced film is coated on the photosurface of CCD &; CMOS sensors,which is a very useful method to enhance the UV-response of CCD &; CMOS sensors. Zn2SiO4:Mn, owing the properties of small particle size, well-stabilizing and high-luminescence QE, has very wide useful vistas in the field of enhance UV-response of CCD &; CMOS sensors. This experiment prepared the Zn2SiO4:Mn thin-films on quartz substrates by the spin-coated method, and measured the transmission spectrum, absorption spectrum,excitation and emission spectrum of Zn2SiO4:Mn thin-films. The result show that the thin-film has steady low transmission when the wavelength less than 300nm and steady high teansmission when the wavelength more than 300nm. It is to say that the thin-film can absorb light which wavelength less than 300nm but can’t absorb more than 300nm. More importantly,the excitation peak of the film is at 265nm and the emission peak is at 525nm. Meanwhile this experiment has analyzed the thickness and smoothness of the Zn2SiO4:Mn thin-films.The result show that the Zn2SiO4:Mn thin-film is a kind of nice thin-film which used to enhance UV-response of CCD &; COMS sensors.