| 溅射法制备InSb薄膜工艺探索—In的氧化及热处理保护 |
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| 引用本文： | 孙承松,魏永广,关艳霞,周立军,温作晓.溅射法制备InSb薄膜工艺探索—In的氧化及热处理保护[J].仪表技术与传感器,2001(8):33-34. |
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| 作者姓名： | 孙承松 魏永广 关艳霞 周立军 温作晓 |
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| 作者单位： | 1. 沈阳工业大学信息学院,沈阳市,110023
2. 东南大学微电子中心,南京市,210096 |
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| 摘 要： | 介绍了用RF溅射法制备InSb薄膜时，如何克服In的氧化问题的措施及防止InSb薄膜在热处理过程中继续氧化和挥发的方法。对实验结果进行了电镜和俄歇电子能谱测试分析。结果表明，只要控制好工艺条件，可以获得较好的效果。
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| 关 键 词： | 溅射InSb薄膜 氧化 热处理 |
| 修稿时间： | 2001年1月15日 |
The Technique Probe of InSb Film by RF Sputtering |
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| Wen Zuoxiao,Wei Yonguan,Guan Yanxia,Zhou Lijun Shenyang University of Technology,Shenyang Sun ChengsongSoutheast University Microelectronics Center,Nanjing.The Technique Probe of InSb Film by RF Sputtering[J].Instrument Technique and Sensor,2001(8):33-34. |
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| Authors: | Wen Zuoxiao Wei Yonguan Guan Yanxia Zhou Lijun Shenyang University of Technology Shenyang Sun ChengsongSoutheast University Microelectronics Center Nanjing |
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| Affiliation: | Wen Zuoxiao,Wei Yonguan,Guan Yanxia,Zhou Lijun Shenyang University of Technology,Shenyang 110023 Sun ChengsongSoutheast University Microelectronics Center,Nanjing 210096 |
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| Abstract: | This paper introduces the measures in fabricating InSb film by RF sputtering method how to overcome the In's oxidation. It also shows the method preventing the InSb's continuous oxidation and evaporation in the heat treatment process. The experimental results have been taken the electronic scope measurement and Auger electronic spectrum analysis. And the results indicate that we can get better effect if we well control the technique condition. |
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| Keywords: | RF Sputtering InSb Film Oxidation Protection |
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