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SiO2薄膜斜角蒸镀工艺研究
引用本文:曹一鸣,卫红,王小辉,唐振方.SiO2薄膜斜角蒸镀工艺研究[J].光学仪器,2012,34(5):89-94.
作者姓名:曹一鸣  卫红  王小辉  唐振方
作者单位:曹一鸣:广州市光机电技术研究院,广东 广州510663
卫红:广州市光机电技术研究院,广东 广州510663
王小辉:广州市光机电技术研究院,广东 广州510663
唐振方:暨南大学 理工学院,广东 广州510632
基金项目:广州市科技支撑计划资助项目(2008Z1-D581)
摘    要:利用斜角蒸镀工艺镀制SiO2薄膜是获得低折射率薄膜的一个有效方法。通过电子束蒸发镀膜方式,利用自制的斜角蒸镀装置,研究了SiO2材料在斜角蒸镀工艺中薄膜倾斜角度与沉积角度的关系,薄膜沉积厚度与设定厚度的关系,薄膜折射率与沉积角度的关系。实验表明利用斜角蒸镀工艺镀制低折射率薄膜是可行的。实验得到了折射率为1.10的SiO2薄膜,并得到了重要的SiO2的折射率与沉积角度关系曲线。

关 键 词:低折射率  SiO2薄膜  斜角蒸镀工艺
收稿时间:2012/2/2

Research on the process of SiO2 film in glancing angle deposition
CAO Yiming,WEI Hong,WANG Xiaohui and TANG Zhenfang.Research on the process of SiO2 film in glancing angle deposition[J].Optical Instruments,2012,34(5):89-94.
Authors:CAO Yiming  WEI Hong  WANG Xiaohui and TANG Zhenfang
Affiliation:1.Guangzhou Institute of Optical Mechanical and Electrical Technology,Guangzhou 510663,China;2.College of Science and Engineering,Jinan University,Guangzhou 510632,China)
Abstract:Depositing SiO2 film by glancing angle deposition process is an effective way to get a low refracting index film. Through electronic beam evaporating, with the use of a home-made glancing angle deposition device, the processing parameters of SiO2 in glancing angle deposition are analysed, which includes the relationship of glancing angle and depositing angle, depositing thickness and set thicknessm, refracting index and depositing angle. A lot of experimental findings indicate that the obtaining of a low refracting index film by glancing angle deposition is a feasible way. SiO2 film with 1.10 refracting index and the relationship curve of refracting index of SiO2 and depositing angle are obtained from the expriments.
Keywords:low refracting index  SiO2 film  glancing angle deposition process
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