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退火对真空蒸发Ti3O5制备光学薄膜性能的影响
引用本文:胡小锋,薛亦渝,郭爱云.退火对真空蒸发Ti3O5制备光学薄膜性能的影响[J].光学仪器,2006,28(2):80-83.
作者姓名:胡小锋  薛亦渝  郭爱云
作者单位:武汉理工大学,湖北,武汉,430070
摘    要:采用真空蒸发法,以T i3O5为膜料分别在基片温度为200℃、250℃、300℃的条件下制备氧化钛光学薄膜,XRD结果显示,沉积态薄膜为无定形态,400℃退火后,均由无定形态向锐钛矿结构转变;不同基片温度下制备的氧化钛薄膜退火后,折射率均随基片温度的升高而增大;随着退火温度的升高,(101)晶相择优取向十分明显,结晶度增大;经过400℃、500℃、600℃退火后,薄膜折射率逐渐上升。

关 键 词:Ti3O5  光学薄膜  退火
文章编号:1005-5630(2006)02-0080-04
收稿时间:2005/6/27
修稿时间:2005年6月27日

Effects of annealing on the optical thin films deposited by EB
HU Xiao-feng,XUE Yi-yu,GUO Ai-yun.Effects of annealing on the optical thin films deposited by EB[J].Optical Instruments,2006,28(2):80-83.
Authors:HU Xiao-feng  XUE Yi-yu  GUO Ai-yun
Abstract:The oxide-titanium optical thin films were deposited by electron-beam deposition(EB) with the Ti_3O_5 coating materials under the 200℃,250℃,300℃ of the substrate temperature.The results of the XRD showed that before annealed the thin films were all undefined structure and after 400℃ annealed were changed to anatase.After annealed the refraction index(n) of the three films were increased as the substrate temperature grown.When the annealed temperature grown,there were obvious(101) preferred orientation,crystallization grow.After annealed under the 400℃,500℃,600℃,the refraction index(n) of the optical thin films were increased as the temperature grown.
Keywords:Ti_3O_5  optical thin film  annealing
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