| 电子束蒸发沉积碲锗铅薄膜的微结构和化学组分研究 |
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| 引用本文： | 谢平,李斌,刘定权,张素英. 电子束蒸发沉积碲锗铅薄膜的微结构和化学组分研究[J]. 光学仪器, 2010, 32(6): 66-69. DOI: 10.3969/j.issn.1005-5630.2010.06.015 |
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| 作者姓名： | 谢平 李斌 刘定权 张素英 |
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| 作者单位： | 中国科学院上海技术物理研究所,上海200083 |
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| 摘 要： | 为了探寻碲锗铅(Pb_(1-x)Ge_xTe)薄膜的最佳沉积方式,在硅基片上采用电子束蒸发沉积碲锗铅(Pb_(0.78)Ge_(0.22)Te)薄膜。使用X射线衍射(XRD)、电子扫描显微镜(SEM)、能量散射X射线分析(EDAX)等手段对薄膜的微结构和化学配比特性进行了分析。发现碲锗铅薄膜为多晶结构,具有明显的择优取向,晶粒多为矩形,薄膜中未出现其它相关氧化物。与热蒸发膜层相比,电子束蒸发沉积的膜层有更为完善的晶体结构。
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| 关 键 词： | 碲锗铅(Pb_(1-x)Ge_xTe) 电子束蒸发 光学薄膜 微结构 化学组分 |
Microstructure and stoichiometry of lead-germanium-telluride films desposited using electron beam evaporation on silicon substrates |
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| XIE Ping,LI Bin,LIU Dingquan,ZHANG Suying. Microstructure and stoichiometry of lead-germanium-telluride films desposited using electron beam evaporation on silicon substrates[J]. Optical Instruments, 2010, 32(6): 66-69. DOI: 10.3969/j.issn.1005-5630.2010.06.015 |
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| Authors: | XIE Ping LI Bin LIU Dingquan ZHANG Suying |
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| Affiliation: | (Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China) |
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| Abstract: | In oMer to find a suitable method to deposit lead-germanium-telluride films, thin-films were deposited on silicon substrates using electron beam evaporation. The resource material is Pb0.78Ge0.22Te bulk ingot. X-ray diffraction （XRD）, scanning electron microscope （SEM）, energy-dispersive analysis by X-ray（EDAX）were used to investigate the microstructure and the stoichiometry of the thin-films. It is shown that thin-films of lead-germanium-telluride are polycrystalline and have a preferred orientation. It is also revealed that the grains appear as rectangles and no other phases and oxides are detected, it can be concluded that compared with resistance evaporation, high kinetic energy of particles evaporated by electron beam favor the formation of perfect crystalline in thin films. |
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| Keywords: | lead-germanium-telluride electron beam evaporation thin-film microstructure stoichiometry |
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