| VO2/GaAs异质结的制备及其光电特性研究 |
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| 引用本文： | 李军显,李毅,周建忠,田蓉,刘进.VO2/GaAs异质结的制备及其光电特性研究[J].光学仪器,2021,43(2):48-54. |
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| 作者姓名： | 李军显 李毅 周建忠 田蓉 刘进 |
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| 作者单位： | 上海理工大学 光电信息与计算机工程学院，上海 200093;上海理工大学 光电信息与计算机工程学院，上海 200093;上海理工大学 上海市现代光学系统重点实验室，上海 200093 |
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| 基金项目： | 国家高技术研究发展计划（863 计划）（2006AA03Z348）；教育部科学技术研究重点项目（207033）；上海市科学技术委员会科技攻关计划（06DZ11415）；上海市教育委员会科技创新重点项目（10ZZ94）；上海领军人才培养计划资助项目（2011-026） |
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| 摘 要： | 采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。
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| 关 键 词： | VO2 GaAs 半导体-金属相变 异质结 整流特性 |
| 收稿时间： | 2020/3/10 0:00:00 |
Study on preparation of VO2/GaAs heterojunction and its optical and electrical properties |
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| LI Junxian,LI Yi,ZHOU Jianzhong,TIAN Rong,LIU Jin.Study on preparation of VO2/GaAs heterojunction and its optical and electrical properties[J].Optical Instruments,2021,43(2):48-54. |
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| Authors: | LI Junxian LI Yi ZHOU Jianzhong TIAN Rong LIU Jin |
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| Affiliation: | School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China |
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| Abstract: | n-VO2/p-GaAs heterojunctions were successfully prepared on a p-type GaAs single crystal substrates using a DC magnetron sputtering and post-annealing process. The effects of different annealing temperatures and annealing times on the properties of the VO2/GaAs heterojunctions were investigated and their crystalline orientation, chemical components, film quality, and optoelectronic properties were analyzed. The results show that we can obtain the best VO2 film with phase transition performance for annealing time 2 hours at annealing temperature 693 K, and the resistance change before and after phase transition is about 2 orders of magnitude. VO2/GaAs heterojunctions have excellent rectifying characteristics at 308 K, 318 K, 328 K and corresponding threshold jump voltages of 6.9 V, 6.6 V and 6.2 V, respectively. The results provide feasibility for the design and application of heterojunction devices based on VO2 phase transition characteristics. |
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| Keywords: | VO2 GaAs semiconductor-metal phase transition heterojunction rectifier characteristics |
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