Characterization of electronic displays using CMOS single‐photon avalanche diode image sensors |
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Authors: | Hanning Mai Istvan Gyongy Neale A.W. Dutton Robert K. Henderson Ian Underwood |
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Affiliation: | 1. School of Engineering, Institute for Integrated Micro and Nano Systems, The University of Edinburgh, Edinburgh, UK;2. STMicroelectronics Imaging Division, Edinburgh, UK |
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Abstract: | Advanced complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array to perform detailed optical measurements on pixels of an organic light‐emitting diode microdisplay at very high sampling rate, very low light level, and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this single‐photon avalanche diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of organic light‐emitting diode pixels. |
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Keywords: | CMOS‐SPAD display measurement |
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