Quasi‐Solid‐State Single‐Atom Transistors |
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| Authors: | Fangqing Xie Andreas Peukert Thorsten Bender Christian Obermair Florian Wertz Philipp Schmieder Thomas Schimmel |
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| Affiliation: | 1. Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany;2. Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Eggenstein‐Leopoldhafen, Germany;3. Material Research Center for Energy Systems (MZE), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany |
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| Abstract: | The single‐atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by the controlled and reversible relocation of one single atom within a metallic quantum point contact. So far, the device operates by applying a small voltage to a control electrode or “gate” within the aqueous electrolyte. Here, the operation of the atomic device in the quasi‐solid state is demonstrated. Gelation of pyrogenic silica transforms the electrolyte into the quasi‐solid state, exhibiting the cohesive properties of a solid and the diffusive properties of a liquid, preventing the leakage problem and avoiding the handling of a liquid system. The electrolyte is characterized by cyclic voltammetry, conductivity measurements, and rotation viscometry. Thus, a first demonstration of the single‐atom transistor operating in the quasi‐solid‐state is given. The silver single‐atom and atomic‐scale transistors in the quasi‐solid‐state allow bistable switching between zero and quantized conductance levels, which are integer multiples of the conductance quantum G0 = 2e2/h. Source–drain currents ranging from 1 to 8 µA are applied in these experiments. Any obvious influence of the gelation of the aqueous electrolyte on the electron transport within the quantum point contact is not observed. |
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| Keywords: | atomic‐scale electronics nano‐electromechanical systems nanotechnology quantum technologies single‐atom transistors |
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