Effect of BiNbO4 doping on the dielectric properties of BaTiO3 ceramics |
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| Authors: | Meng Wei Jihua Zhang Kaituo Wu Hongwei Chen Chuanren Yang |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, Collaboration Innovation Center of Electric Materials and Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, People's Republic of China |
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| Abstract: | In this paper, the effect of BiNbO4 doping on the structural characteristics and dielectric properties were investigated systematically. With the increase in the BiNbO4 content, a systematic structural characteristics change from ferroelectric tetragonal to cubic phase. Dielectric properties changed from classical ferroelectric behavior to dispersive relaxor‐like behavior, further to linear behavior. Because of the created defect dipoles, the long‐range dipolar interaction was interrupted and the weak couplings were formed. Energy storage density reached the maximum of 0.797 J/cm3 with energy efficiency of 92.5% in 0.9BT‐0.1BN. The nonlinearity was suppressed obviously, which could enhance the energy storage density in lead‐free relaxor materials. |
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| Keywords: | capacitors co‐doping dielectric properties energy density nonlinearity |
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