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Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors
Authors:Xuming Zou  Jingli Wang  Chung‐Hua Chiu  Yun Wu  Xiangheng Xiao  Changzhong Jiang  Wen‐Wei Wu  Liqiang Mai  Tangsheng Chen  Jinchai Li  Johnny C. Ho  Lei Liao
Affiliation:1. Department of Physics and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education, Wuhan University, Wuhan, China;2. Department of Materials Science and Engineering, National Chiao Tung University, Hsin‐chu, Taiwan;3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, China;4. WUT‐Harvard Joint Nano Key Laboratory, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, China;5. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR, China
Abstract:
Keywords:MoS2  top‐gated  transistors  interface engineering  two‐dimensional materials
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