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Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element
Authors:Yuchao Yang  Jihang Lee  Seunghyun Lee  Che‐Hung Liu  Zhaohui Zhong  Wei Lu
Affiliation:Department of Electrical Engineering, and Computer Science, University of Michigan, Ann Arbor, Michigan
Abstract:
Keywords:resistive memory  RRAM  sneak path  graphene  threshold switching  trap‐limited conduction
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