| 纳秒脉冲激光处理后硅电池光电转换效率研究 |
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| 引用本文： | 黄继强,胡传炘,刘颖,沈忱. 纳秒脉冲激光处理后硅电池光电转换效率研究[J]. 激光技术, 2013, 37(3): 317-320. DOI: 10.7510/jgjs.issn.1001-3806.2013.03.011 |
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| 作者姓名： | 黄继强 胡传炘 刘颖 沈忱 |
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| 作者单位： | 1.北京石油化工学院光机电装备技术北京市重点实验室, 北京102617; |
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| 摘 要： | 为了研究纳秒激光于硅晶片改性的可能性,对飞秒及皮秒激光在SF6气体中与硅表面作用形成锥形微观结构及其作用过程进行了分析。通过在SF6气体氛围中采用6ns激光脉冲辐照硅片表面的方法,以获得硅片表面峰状结构,并对此种作用下微观结构形成过程及结果进行了分析。将激光处理后的硅片与未经激光处理的硅片同时放入到硅电池片生产线的适当工序中制成硅电池片,通过对比测试两种硅电池的光电转换效率,从硅表面状况等因素对实验结果进行了初步分析。结果表明,激光处理后的硅片制成硅电池片的光电转换效率与未经激光处理的相比有一定程度的提高,可达15%～25%。
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| 关 键 词： | 激光技术 光电转化效率 纳秒脉冲激光 硅电池片 |
| 收稿时间： | 2012-07-06 |
Research of photovoltaic conversion efficiency of silicon cells irradiated by nanosecond laser pulses |
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| HUANG Ji-qiang , HU Chuan-xin , LIU Ying , SHEN Chen. Research of photovoltaic conversion efficiency of silicon cells irradiated by nanosecond laser pulses[J]. Laser Technology, 2013, 37(3): 317-320. DOI: 10.7510/jgjs.issn.1001-3806.2013.03.011 |
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| Authors: | HUANG Ji-qiang HU Chuan-xin LIU Ying SHEN Chen |
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| Affiliation: | 1.Beijing Area Major Laboratory of Opto-Mechatronic Equipment Technology,Beijing Institute of Petro-Chemical Technology,Beijing 102617,China;2.College of Material Science and Engineering,Beijing University of Technology,Beijing 100124,China) |
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| Abstract: | The conical microstructures on the silicon wafer surface shaped by irradiating from femtosecond or picosecond laser pulses in SF6 atmosphere was shown and its forming processes were analyzed.The feasibility and necessity were proposed to use nanosecond laser pulses irradiating the surface to enhance some characteristics of the silicon wafer.The forming processes and results of conical microstructures on the silicon wafer surface irradiated by pulsed laser with 6ns width in SF6 atmosphere were described.The silicon wafers both with and without laser pulses treatment were put into product line at the same time to produce silicon solar cell.Then,the two type cells were both measured to compare the photovoltaic conversion efficiency.A preliminary analysis was also given to discuss the experiment results from the point of the surface of silicon wafer.The results showed that the former had higher conversion efficiency in the range of 15% to 25%. |
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