| InGaAs/InP APD探测器光电特性检测 |
| |
| 引用本文： | 肖雪芳,杨国华,归强,王国宏,马晓宇,陈朝,陈良惠. InGaAs/InP APD探测器光电特性检测[J]. 电子科技大学学报(自然科学版), 2008, 37(3): 460-463 |
| |
| 作者姓名： | 肖雪芳 杨国华 归强 王国宏 马晓宇 陈朝 陈良惠 |
| |
| 作者单位： | 1.中国科学院半导体研究所 北京 海淀区 100083; |
| |
| 摘 要： | 建立了雪崩二极管的静态光电特性的自动测试系统。利用该系统对光敏面的直径为500 μm的台面型InGaAs/InP雪崩光电二极管(APDs)进行测试。测试结果表明,该APD器件在90%击穿电压下的暗电流为151 nA,在直径500 μm的光敏面上其光响应均匀性良好。提出一种测量雪崩二极管倍增因子的方法,只需利用普通的测量电流-电压的测试仪器,就可以获得开始倍增时的光电流,从而得到APD的倍增因子。通过该方法得到的InGaAs/InP APD器件最大倍增因子的典型值在10~100量级。
|
| 关 键 词： | 静态光电特性的自动测试系统 雪崩光电二极管 大面积APD 倍增因子 |
| 收稿时间： | 2006-10-24 |
| 修稿时间： | 2006-10-24 |
Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode |
| |
| XIAO Xue-fang,YANG Guo-hua,GUI qiang,WANG Guo-hong,MA Xiao-yu,CHEN Chao,CHEN Liang-hui. Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode[J]. Journal of University of Electronic Science and Technology of China, 2008, 37(3): 460-463 |
| |
| Authors: | XIAO Xue-fang YANG Guo-hua GUI qiang WANG Guo-hong MA Xiao-yu CHEN Chao CHEN Liang-hui |
| |
| Affiliation: | 1.Institute of Semiconductor of Chinese Academy of Science Haidian Beijing 100083;2.Department of Physics of Xiamen University Xiamen 361005 |
| |
| Abstract: | A measurement system is set up which could measure static optoelectronic characteristics of avalanche photodiodes (APDs). By using this system, the mesa-structure InP/InGaAs APDs is measured. The results show that the APDs have a relatively low dark current (~150 nA at 90% of breakdown) and a uniform photoresponse profile of about 500 μm diameter. A method of getting APDs's multiplication gain is also proposed. Through getting the photocurrent at the point where multiplication is beginning, the multiplication gain can be obtained by the simple current-voltage equipment. For InP/InGaAs APDs, the typical maximum multiplication gain measured by this method is about 10~100. |
| |
| Keywords: | |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子科技大学学报(自然科学版)》浏览原始摘要信息 |
|
点击此处可从《电子科技大学学报(自然科学版)》下载全文 |
