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溅射功率对磁控溅射制备Bi薄膜结构和性能的影响
引用本文:廖国,何智兵,陈太红,许华,李俊,谌加军. 溅射功率对磁控溅射制备Bi薄膜结构和性能的影响[J]. 原子能科学技术, 2012, 46(6): 749-753. DOI: 10.7538/yzk.2012.46.06.0749
作者姓名:廖国  何智兵  陈太红  许华  李俊  谌加军
作者单位:1.西华师范大学 ;物理与电子信息学院,四川 ;南充637002;2.中国工程物理研究院 ;激光聚变研究中心,四川 ;绵阳621900
基金项目:西华师范大学大学生科技创新基金资助项目
摘    要:采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示:薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明:Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。

关 键 词:直流磁控溅射   Bi薄膜   溅射功率

Effect of Sputtering Power on Structure and Properties of Bi Film Deposited by DC Magnetron Sputtering
LIAO Guo , HE Zhi-bing , CHEN Tai-hong , XU Hua , LI Jun , CHEN Jia-jun. Effect of Sputtering Power on Structure and Properties of Bi Film Deposited by DC Magnetron Sputtering[J]. Atomic Energy Science and Technology, 2012, 46(6): 749-753. DOI: 10.7538/yzk.2012.46.06.0749
Authors:LIAO Guo    HE Zhi-bing    CHEN Tai-hong    XU Hua    LI Jun    CHEN Jia-jun
Affiliation:1.School of Physics and Electronic Information, China West Normal University, Nanchong 637002, China;2.Research Center of Laser Fusion, China Academy of Engingeering Physics, Mianyang 621900, China
Abstract:Bi film was fabricated at different sputtering powers by DC magnetron sputtering.The deposition rate of Bi film as the function of sputtering power was studied.The surface topography of Bi film was observed by SEM,and the growth mode of Bi film was investigated.The crystal structure was analyzed by XRD.The grain size and stress of Bi film were calculated.The SEM images show that all the films are columnar growth.The average grain size firstly increases as the sputtering power increases,then decreases at 60 W.The film becomes loose with the increase of sputtering power,while,the film gets compact when the sputtering power becomes from 45 to 60 W.The XRD results show that films are polycrystalline of hexagonal.And the stress transforms from the tensile stress to compressive stress as the sputtering power increases.
Keywords:DC magnetron sputtering  Bi film  sputtering power
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