| 采用剥离技术的铝栅100位CCD模拟延迟线 |
| |
| 引用本文： | 孙昌诚, 刘祖友. 采用剥离技术的铝栅100位CCD模拟延迟线[J]. 北京工业大学学报, 1980, 6(3): 129-139. |
| |
| 作者姓名： | 孙昌诚 刘祖友 |
| |
| 作者单位： | 北京工业大学微电子学研究室(孙昌诚)，北京工业大学微电子学研究室(刘祖友) |
| |
| 摘 要： | 本文提出一种以多晶硅为辅助层的剥离技术,运用该技术已研制成功铝栅100位CCD模拟延迟线.实验表明此项技术在长细线条、窄间距(2.5μm以下)、高集成度的金属化工艺中容易获得高的成品率.填在转移电极间隙的多晶硅层可以发挥度好的钝化作用.对于三相电极结构中互连
|
An Aluminum Gate 100 - Element CCD Analog Delay Line Fabricated by Use of Lift-off Technic |
| |
| Sun Chang-cheng, Liu Zu-you. An Aluminum Gate 100-Element CCD Analog Delay Line Fabricated by Use of Lift-off Technic[J]. Journal of Beijing University of Technology, 1980, 6(3): 129-139. |
| |
| Authors: | Sun Chang-cheng Liu Zu-you |
| |
| Abstract: | An aluminum gate 100 - element CCD analog delay line has been fabricated using a lift - off technique employing an auxiliary poly-Si layer. Experiment testifies that this technique can readily obtain high finished productivity in the metallization of large scale integration where small conductor linewidths and small spaces (less than 2.5 μm) between conductors are reguired. The poly-Si layer between transfer electrodes serves as a excellent passivation. The design of diffusion tunnels for interconnections in the 3-phase structure has been improved. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《北京工业大学学报》浏览原始摘要信息 |
|
点击此处可从《北京工业大学学报》下载全文 |
