| 辛基酚的碳化硅@膨胀石墨修饰电极法检测 |
| |
| 引用本文： | 严 鹏1,王庆虎2,余 俊1,张媛媛1,杨年俊1,李亚伟2,万其进1. 辛基酚的碳化硅@膨胀石墨修饰电极法检测[J]. 武汉工程大学学报, 2017, 39(2): 113-119 |
| |
| 作者姓名： | 严 鹏1 王庆虎2 余 俊1 张媛媛1 杨年俊1 李亚伟2 万其进1 |
| |
| 作者单位： | 1. 武汉工程大学化学与环境工程学院，湖北 武汉 430205；2. 武汉科技大学耐火材料与高温陶瓷国家重点实验室培育基地，湖北 武汉 430081 |
| |
| 摘 要： | 采用气相沉积法在膨胀石墨（EG）层片间生长碳化硅（SiC）晶须，制备出复合材料碳化硅@膨胀石墨（SiC@EG），并通过改变气相沉积的温度（分别为1 200 ℃、1 300 ℃、1 400 ℃）制备出不同形貌的SiC@EG. 所得材料用扫描电镜和循环伏安法及交流阻抗技术进行表征，结果表明1 300 ℃下制得的SiC@EG具有较好的电化学性能，将其作为新型修饰电极材料应用于对酚类环境激素的检测，研究了辛基酚在SiC@EG修饰电极上的电化学行为. 通过考察辛基酚在SiC@EG修饰电极上氧化行为的影响因素，对实验条件进行了优化. 在最优条件下，辛基酚的氧化峰电流和浓度在0.1 μmol / L~10 μmol/L范围内呈现良好的线性关系，检测限达35 nmol/L.
|
| 关 键 词： | 碳化硅晶须 膨胀石墨 化学修饰电极 辛基酚 |
Detection of Octylphenolusing with Silicon Carbide @ Expanded Graphite Modified Electrodes |
| |
| YAN Peng1,WANG Qinghu2,YU Jun1,ZHANG Yuanyuan1,YANG Nianjun1,LI Yawei2,WAN Qijin1. Detection of Octylphenolusing with Silicon Carbide @ Expanded Graphite Modified Electrodes[J]. Journal of Wuhan Institute of Chemical Technology, 2017, 39(2): 113-119 |
| |
| Authors: | YAN Peng1 WANG Qinghu2 YU Jun1 ZHANG Yuanyuan1 YANG Nianjun1 LI Yawei2 WAN Qijin1 |
| |
| Affiliation: | 1. School of Chemistry and Environmental Engineering， Wuhan Institute of Technology， Wuhan 430205， China2. The Key State Laboratory Breeding Base of Refractories and Ceramics，Wuhan University of Science and Technology，Wuhan 430081，China |
| |
| Abstract: | The composite materials of silicon carbide @ expanded graphite（SiC@EG） were prepared through the grown of Silicon carbide between the expanded graphite layers by vapor deposition. Different morphologies of SiC @ EG were developed by changing the temperature of vapor deposition from 1 200 ℃， 1 300 ℃ to 1 400 ℃， respectively， and they were characterized by scanning electron microscopy， cyclic voltammetry and electrochemical impedance spectroscopy. The SiC @ EG prepared at 1 300 ℃ shows the best electrochemical property， which was used a novel modified electrode material for the detection of phenolic environmental hormones， and the electrochemical behavior of octylphenol on SiC @ EG modified electrode was studied. The experimental conditions were optimized by investigating the effect of octylphenol oxidation on SiC @ EG modified electrode. Under the optimal conditions， the oxidation peak current and the concentration of octylphenol show a favorable linearity over the range of 0.1 μmol / L-10 μmol / L with the detection limit of 35 nmol / L. |
| |
| Keywords: | silicon carbide whisker expanded graphite chemical modified electrodes octylphenol |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《武汉工程大学学报》浏览原始摘要信息 |
|
点击此处可从《武汉工程大学学报》下载免费的PDF全文 |
