| Bi5Ti3FeO15薄膜的结构和多铁性研究 |
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| 引用本文： | 黄志登,赵洪阳,马志斌,付秋明,陶 洪,梵子冉. Bi5Ti3FeO15薄膜的结构和多铁性研究[J]. 无机材料学报, 2017, 32(10): 1018-1022. DOI: 10.15541/jim20160630 |
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| 作者姓名： | 黄志登 赵洪阳 马志斌 付秋明 陶 洪 梵子冉 |
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| 作者单位： | (武汉工程大学 材料科学与工程学院, 湖北省等离子体化学与新材料重点实验室, 武汉 430073) |
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| 基金项目： | 国家自然科学基金(51402327, 91622122);湖北省教育厅科学技术研究项目(2016CFB387) |
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| 摘 要： | 采用脉冲激光沉积的方法, 在Pt/Ti/SiO2/Si衬底上生长Bi5Ti3FeO15 (BTFO15)多铁性薄膜, 并对其结构、磁性、铁电性、铁电畴等进行了研究。通过X射线衍射、扫描电镜以及高角环形暗场像-扫描透射电镜测试, 结果表明, 薄膜具有高结晶度和完美层状晶格结构, 两层Bi原子层紧密堆积, 两层Bi2O2之间有三层Bi层和三层Ti(Fe)O6八面体层, 构成三明治结构; 在室温下的磁滞回线和电滞回线证实了弱铁磁性和铁电性的共存; 采用压电响应力显微镜研究了薄膜的畴结构, 在面内和面外分别施加±3 V和±10 V的电压, 观测到了畴反转。这些研究结果对理解多铁性材料的微观结构和宏观特性的相互调制有重要意义。
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| 关 键 词： | Bi5Ti3FeO15薄膜 多铁性 铁电畴 |
| 收稿时间： | 2016-11-15 |
| 修稿时间： | 2016-12-28 |
Structure and Property of Bi5Ti3FeO15 Film |
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| HUANG Zhi-Deng,ZHAO Hong-Yang,MA Zhi-Bin,FU Qiu-Ming,TAO Hong,FAN Zi-Ran. Structure and Property of Bi5Ti3FeO15 Film[J]. Journal of Inorganic Materials, 2017, 32(10): 1018-1022. DOI: 10.15541/jim20160630 |
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| Authors: | HUANG Zhi-Deng ZHAO Hong-Yang MA Zhi-Bin FU Qiu-Ming TAO Hong FAN Zi-Ran |
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| Affiliation: | (Key Laboratory of Plasma Chemical and Advanced Materials of Hubei Province, Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China) |
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| Abstract: | Bi5Ti3FeO15 (BTFO15) thin films were grown on Pt/Ti/SiO2/Si substrate by pulsed laser deposition (PLD) method. The structure, magnetic properties, ferroelectric properties, and ferroelectric domains were studied by using X ray diffraction, scanning electron microscopy and scanning TEM high-angle annular dark-field (HAADF STEM). Results showed that the BTFO15 film had high crystallization with perfect layered lattice structure. It stacked like a sandwich which three Bi layers and Ti(Fe)O6 octahedra were sandwiched by two closely stacked Bi layers. In addtion, room-temperature magnetic hystersis loop and ferroelectric hysteresis loop confirmed that the BTFO15 film had weak ferromagnetism and ferroelectricity. The piezo response force microscope was used to study the domain and domain switching, the in-plane and out-of-plane PFM images were obtained by applying the voltage of ±3 V and ±10 V. These results are important to understand the relationship between microstructure and property of multiferroic materials. |
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| Keywords: | Bi5Ti3FeO15 film multiferroic ferroelectric domain |
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