Synthesis,Crystal Structure,and Luminescence Properties of Y4Si2O7N2: Eu2+ Oxynitride Phosphors |
| |
| Authors: | Guozhang Chen Liang‐Jun Yin Jun‐Tao Dong Yan‐Yu Feng Yang Gao Weidong He Yu Jia Xin Xu Hubertus T. Hintzen |
| |
| Affiliation: | 1. School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;2. Luminescent Materials Research Group, Faculty of Applied Sciences, Delft University of Technology, Delft, the Netherlands;3. School of Microelectronics and Solid‐State Electronics, University of Electronic Science and Technology of China, Chengdu, China;4. Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China |
| |
| Abstract: | Y4Si2O7N2: Eu2+ phosphor has been prepared by a pretreatment method. Reduction in Eu3+ ions into Eu2+ by the use of hydrogen iodide (HI) is verified by X‐ray absorption near‐edge structure (XANES) and electrode potential analysis. Y4Si2O7N2: Eu2+ phosphor has a broad emission band in the range of 400–500 nm. Furthermore, the effect of Zr doping on the structure and luminescence properties of Y4Si2O7N2: Eu2+ phosphor is researched. It found that the Zr doping leads to an emission blueshift, and improves the luminescence intensity and thermal quenching behavior of Y4Si2O7N2: Eu2+ phosphors. Prospectively, the pretreatment approach could be extended to develop other Eu2+‐doped compounds. |
| |
| Keywords: | |
|
|
