| 浮栅ROM器件γ射线、X射线和中子辐射效应实验研究 |
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| 引用本文： | 何宝平,张凤祁,姚志斌. 浮栅ROM器件γ射线、X射线和中子辐射效应实验研究[J]. 原子能科学技术, 2007, 41(4): 489-492. DOI: 10.7538/yzk.2007.41.04.0489 |
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| 作者姓名： | 何宝平 张凤祁 姚志斌 |
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| 作者单位： | 西北核技术研究所, ;陕西 ;西安 ; 710613 |
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| 摘 要： | 本工作涉及浮栅ROM器件AT29C256的γ射线、X射线和反应堆快中子辐照实验测量。测量结果表明，浮栅ROM器件γ射线、X射线和快中子辐照效应是典型的总剂量效应。错误发生存在剂量阈值，开始出错时的错误数及错误地址不确定，错误数随辐照剂量或注量的增大而增加。
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| 关 键 词： | 浮栅ROM器件 γ射线 X射线 中子 总剂量效应 |
| 文章编号： | 1000-6931（2007）04-0489-04 |
| 收稿时间： | 2006-03-06 |
| 修稿时间： | 2006-03-062006-09-05 |
Experimental Study on Irradiation Effects of γ, X and Neutron in Floating ROM Devices |
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| HE Bao-ping,ZHANG Feng-qi,YAO Zhi-bin. Experimental Study on Irradiation Effects of γ, X and Neutron in Floating ROM Devices[J]. Atomic Energy Science and Technology, 2007, 41(4): 489-492. DOI: 10.7538/yzk.2007.41.04.0489 |
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| Authors: | HE Bao-ping ZHANG Feng-qi YAO Zhi-bin |
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| Affiliation: | Northwest Institute of Nuclear Technology, Xi’an 710613, China |
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| Abstract: | γ-ray，X-ray and neutron irradiation effects of floating ROM devices were measured. The measured results show γ-ray，X-ray and neutron irradiation effects of floating ROM devices are total dose effects. There is a dose threshold when error occurs. At the beginning of error occurrence, the error address and data are random, and the data errors number goes up with the increase of dose or fluence. |
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| Keywords: | floating ROM device γ-ray X-ray neutron total dose effect |
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