| AlGaN/GaN HEMT在N2中高温退火研究 |
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| 引用本文： | 王冲,张金风,郝跃,冯倩,杨燕,张进城. AlGaN/GaN HEMT在N2中高温退火研究[J]. 西安电子科技大学学报(自然科学版), 2006, 33(6): 862-865 |
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| 作者姓名： | 王冲 张金风 郝跃 冯倩 杨燕 张进城 |
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| 作者单位： | 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);国家部委科技预研项目;国家部委重点实验室基金 |
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| 摘 要： | 通过N2气氛中对蓝宝石衬底AlGaN／GaN HEMT在200～600℃退火1min和5min的多批实验,研究了在不同温度和时间退火冷却后器件直流参数的变化．对器件欧姆接触和肖特基接触在高温退火前后的特性进行了对比分析．确定出了最有利于高电子迁移率晶体管特性提高的退火温度为500℃．退火时间为5min．该条件退火后高电子迁移率晶体管最大跨导提高8．9%．肖特基栅反向漏电流减小2个数量级．阈值电压绝对值减小．退火后肖特基势垒高度提高．在减小栅泄漏电流的同时对沟道电子也有耗尽作用．这是饱和电流和阈值电压变化的主要原因．采用扫描电子显微镜观察肖特基退火后的形貌，500℃未发现明显变化．600℃有起泡现象．
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| 关 键 词： | 高电子迁移率晶体管 泄漏电流 阈值电压 接触电阻 |
| 文章编号： | 1000-2400（2006）06-0862-04 |
| 收稿时间： | 2006-01-21 |
| 修稿时间： | 2006-01-21 |
Study of AlGaN/GaN HEMT high temperature anneal in N2 |
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| WANG Chong,ZHANG Jin-feng,HAO Yue,FENG Qian,YANG Yan,ZHANG Jin-cheng. Study of AlGaN/GaN HEMT high temperature anneal in N2[J]. Journal of Xidian University, 2006, 33(6): 862-865 |
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| Authors: | WANG Chong ZHANG Jin-feng HAO Yue FENG Qian YANG Yan ZHANG Jin-cheng |
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| Affiliation: | Ministry of Edu. Key Lab. of Wide Band Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071， China |
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| Abstract: | Annealing experiments were carried out at 200~600℃ for 1min and 5min on many batches of AlGaN/GaN HEMTs on the sapphire, and the DC characteristics before annealing and after cooling were compared and analyzed. Also measured were the change of the characteristics of the ohmic contacts and the schottky contacts. It is found that the optimized annealing condition for improving the device characteristics is 500℃ annealing for 5min. Under this condition the maximum transconductance is raised by 8. 9%, the reverse leakage of schottky gate is reduced by two orders of magnitude, and the threshold voltage moves toward the positive direction. The elevation of the schottky barrier height after annealing causes the reduction of gate leakage and the more depletion of channel electrons, which also leads to the change of the saturation current and the threshold voltage. The surface morphology of the schottky contact is observed after annealing by SEM. No obvious change is found for 500℃-annealed samples, but bubbling appears for 600℃-annealed ones. |
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| Keywords: | high elctron mobility transistors leakage current threshold voltage scontact resistance |
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