Homoepitaxial Growth of Large‐Scale Highly Organized Transition Metal Dichalcogenide Patterns |
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| Authors: | Jianyi Chen Xiaoxu Zhao Gustavo Grinblat Zhongxin Chen Sherman J. R. Tan Wei Fu Zijing Ding Ibrahim Abdelwahab Yi Li Dechao Geng Yanpeng Liu Kai Leng Bo Liu Wei Liu Wei Tang Stefan A. Maier Stephen John Pennycook Kian Ping Loh |
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| Affiliation: | 1. Graphene Research Centre and Department of Chemistry, National University of Singapore, Singapore, Singapore;2. The Blackett Laboratory, Department of Physics, Imperial College London, London, SW7 2AZ, UK;3. Chair in Hybrid Nanosystems, Ludwig‐Maximilians‐Universit?t München, München, Germany;4. Department of Materials Science & Engineering, National University of Singapore, Singapore, Singapore |
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| Abstract: | Controllable growth of highly crystalline transition metal dichalcogenide (TMD) patterns with regular morphology and unique edge structure is highly desired and important for fundamental research and potential applications. Here, single‐crystalline MoS2 flakes are reported with regular trigonal symmetric patterns that can be homoepitaxially grown on MoS2 monolayer via chemical vapor deposition. The highly organized MoS2 patterns are rhombohedral (3R)‐stacked with the underlying MoS2 monolayer, and their boundaries are predominantly terminated by zigzag Mo edge structure. The epitaxial MoS2 crystals can be tailored from compact triangles to fractal flakes, and the pattern formation can be explained by the anisotropic growth rates of the S and Mo edges under low sulfur chemical potential. The 3R‐stacked MoS2 pattern demonstrates strong second and third‐harmonic‐generation signals, which exceed those reported for monolayer MoS2 by a factor of 6 and 4, correspondingly. This homoepitaxial growth approach for making highly organized TMD patterns is also demonstrated for WS2. |
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| Keywords: | 2D materials chemical vapor deposition harmonic generation highly organized patterns homoepitaxial growth transition metal dichalcogenides |
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