| 全耗尽SOI MOSFETs阈值电压解析模型 |
| |
| 引用本文： | 李瑞贞,韩郑生. 全耗尽SOI MOSFETs阈值电压解析模型[J]. 半导体学报, 2005, 26(12): 2303-2308 |
| |
| 作者姓名： | 李瑞贞 韩郑生 |
| |
| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
| |
| 摘 要： | 提出了一种新的全耗尽SOI MOSFETs阈值电压二维解析模型.通过求解二维泊松方程得到器件有源层的二维电势分布函数,氧化层-硅界面处的电势最小值用于监测SOI MOSFETs的阈值电压.通过对不同栅长、栅氧厚度、硅膜厚度和沟道掺杂浓度的SOI MOSFETs的MEDICI模拟结果的比较,验证了该模型,并取得了很好的一致性.
|
| 关 键 词： | 全耗尽SOI MOSFETs 表面势 阈值电压 |
| 收稿时间： | 2015-08-19 |
An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs |
| |
| Li Ruizhen, Han Zhengsheng. An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2005, In Press. Li R Z, Han Z S. An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs[J]. Chin. J. Semicond., 2005, 26(12): 2303.Export: BibTex EndNote |
| |
| Authors: | Li Ruizhen Han Zhengsheng |
| |
| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
| |
| Abstract: | A new two-dimensional (2D) analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson's equation. The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs. This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths, gate oxide thicknesses, silicon film thicknesses, and channel doping concentrations. |
| |
| Keywords: | fully depleted SOI MOSFETs surface potential threshold voltage |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
