| 量子点发光二极管在大电压下的失效研究 |
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| 引用本文： | 张文静,张芹,邹文栋,常春,熊楠菲,李凤,李清华. 量子点发光二极管在大电压下的失效研究[J]. 失效分析与预防, 2018, 13(6): 335-338, 351. DOI: 10.3969/j.issn.1673-6214.2018.06.001 |
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| 作者姓名： | 张文静 张芹 邹文栋 常春 熊楠菲 李凤 李清华 |
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| 作者单位： | 南昌航空大学 测试与光电工程学院, 南昌 330063 |
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| 摘 要： | 作为下一代照明光源和显示器件, 量子点发光二极管的失效研究对提高其可靠性, 促进其进入市场应用具有重要的价值和意义。对量子点发光二极管器件施加7 V恒压电压, 使其快速失效, 平均中位寿命为4 h, 寿命为45 h。主要的失效形式为电流密度和亮度急剧下降, 最终不再发光, 并且在器件表面出现黑色斑点。可能的失效机制为Al电极等功能层发生了化学反应或者在界面出现了脱层, 导致电荷无法注入, 使器件失效。
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| 关 键 词： | 量子点发光二极管 失效 寿命 |
| 收稿时间： | 2018-09-28 |
Failure of Quantum Dot Light-emitting Diode Under High Voltage |
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| ZHANG Wen-jing,ZHANG Qin,ZOU Wen-dong,CHANG Chun,XIONG Nan-fei,LI Feng,LI Qing-hua. Failure of Quantum Dot Light-emitting Diode Under High Voltage[J]. Failure Analysis and Prevention, 2018, 13(6): 335-338, 351. DOI: 10.3969/j.issn.1673-6214.2018.06.001 |
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| Authors: | ZHANG Wen-jing ZHANG Qin ZOU Wen-dong CHANG Chun XIONG Nan-fei LI Feng LI Qing-hua |
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| Abstract: | As the next generation device for lighting and display, the research on the failure of quantum dot light-emitting diode (QLED) has important value and significance to improve its reliability and promote its application in market.By applying a constant voltage of 7 V to the QLED device, it can be found that the large voltage causes the device to fail quickly.The average median life of the QLED is 4 h and the life is 45 h.The main failure mode is that the current density and brightness of the QLED devices drop sharply, eventually no longer emitting light, and some black spots appear on the surface of the device.The possible failure mechanism is a chemical reaction in functional layers such as the Al electrode or delamination at the interface, resulting the device failure due to the inability of inject charge. |
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