| 利用Volterra级数的低噪声放大器线性增强设计 |
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| 引用本文： | 井凯,庄奕琪,李振荣. 利用Volterra级数的低噪声放大器线性增强设计[J]. 四川大学学报(工程科学版), 2014, 46(Z1): 171-176 |
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| 作者姓名： | 井凯 庄奕琪 李振荣 |
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| 作者单位： | 西安电子科技大学,西安电子科技大学学,西安电子科技大学 |
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| 基金项目： | 高K介质MOS器件共振隧穿低频噪声模型及应用研究（61076101）；无结围栅纳米线MOSFET的短沟道效应研究（61204092） |
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| 摘 要： | 针对单级宽带低噪声放大器（LNA）非线性难以定量分析以及难以将电路设计与线性指标联合设计的问题，提出利用Volterra级数和双极非线性模型相结合的方法优化电路线性度。该方法从SiGe双极管非线性模型出发，提取影响线性度的模型参数，并利用维塔里级数和双极管非线性模型导出器件非线性传输函数，推演出其与IIP3的相互关系，量化各个参数的非线性比重，提出优化线性度的电路设计方法。研究结果表明，在1.5-20GHz的宽频工作频带下，单级低噪声放大器的输入和输出均可实现良好的匹配（<-10dB），达到16dB的增益，噪声系数在整个频带下小于3.6dB，IIP3可达-7.73dBm。
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| 关 键 词： | SiGe 低噪声放大器(LNA) Volterra 级数 Pi型匹配网络 线性度 |
| 收稿时间： | 2013-08-28 |
| 修稿时间： | 2014-04-03 |
Volterra Series-based Linearity Enhancement Design of Low Noise Amplifier |
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| Jin K,Zhuang Yiqi and Li Zhenrong. Volterra Series-based Linearity Enhancement Design of Low Noise Amplifier[J]. Journal of Sichuan University (Engineering Science Edition), 2014, 46(Z1): 171-176 |
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| Authors: | Jin K Zhuang Yiqi Li Zhenrong |
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| Affiliation: | School of Microelectronics,Xidian Univ.;School of Microelectronics,Xidian Univ.;School of Microelectronics,Xidian Univ. |
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| Abstract: | A new circuit-linearity optimization approach combing Volterra series and bipolar non-linear model was proposed.SiGe bipolar non-linear model was introduced and model parameters affecting linearity were extracted. Device non-linear transfer functions were derived using Volterra series and bipolar non-linear model and its relationship with IIP3 was obtained, qualifying corresponding non-linear weight among these parameters. A circuit design method ensuring good linearity was proposed. Results showed that in the operating broad band of 1.5~20 GHz the proposed one-stage LNA can have good input and output matches(less than -10 dB)as well as gain of 16 dB. Noise figure was below 3.6 dB and IIP3 can achieve -7.73 dBm across the whole band. |
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| Keywords: | SiGe Low noise amplifier (LNA) Volterra Series Pi type matching network linearity |
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