| 体Si和SOI工艺SRAM芯片电磁敏感度的温度效应 |
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| 引用本文： | 吴旭景,王蒙军,吴建飞,李彬鸿,郝宁,高见头,李宏,张红丽. 体Si和SOI工艺SRAM芯片电磁敏感度的温度效应[J]. 电波科学学报, 2021, 36(1): 101-108. DOI: 10.13443/j.cjors.2019081901 |
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| 作者姓名： | 吴旭景 王蒙军 吴建飞 李彬鸿 郝宁 高见头 李宏 张红丽 |
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| 作者单位： | 1.河北工业大学电子信息工程学院，天津 300401 |
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| 基金项目： | 国家自然科学基金;天津优秀青年学者人才发展专项规划 |
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| 摘 要： | 考虑到芯片实际应用环境的复杂性,针对体硅(silicon,Si)和绝缘体上硅(silicon on insulator,SOI)两种工艺的静态随机存储器(static random-access memory,SRAM),测试研究温度效应分别对这两种不同工艺存储器芯片敏感度的影响.依据两种工艺下金属氧化物半导体(met...
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| 关 键 词： | 体硅 绝缘体上硅 静态随机存储器 直接功率注入 电磁敏感度 温度效应 |
| 收稿时间： | 2019-08-19 |
Temperature effect on electromagnetic sensitivity of SRAM chips in bulk Si and SOI technologies |
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| WU Xujing,WANG Mengjun,WU Jianfei,LI Binhong,HAO Ning,GAO Jiantou,LI Hong,ZHANG Hongli. Temperature effect on electromagnetic sensitivity of SRAM chips in bulk Si and SOI technologies[J]. Chinese Journal of Radio Science, 2021, 36(1): 101-108. DOI: 10.13443/j.cjors.2019081901 |
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| Authors: | WU Xujing WANG Mengjun WU Jianfei LI Binhong HAO Ning GAO Jiantou LI Hong ZHANG Hongli |
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| Affiliation: | 1.School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China2.Tianjin Adance Technology Institutes, Tianjin 300450, China3.College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China4.Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | Considering the complexity of the practical application environment of the chip,the effects of temperature on the sensitivity of static random access memory(SRAM)chips with bulk silicon(Si)and silicon on insulator(SOI)technologies were tested and studied.According to the similarities and differences of metal oxide semiconductor(MOS)devices under two technologies,the temperature effects of MOS devices under two technologies were compared and analyzed.A testing platform was built to evaluate the effect of temperature and electromagnetic interference(EMI)on SRAM by combining the temperature chamber and direct power injection(DPI)method test equipment.Through theoretical and experimental research,it is found that the sensitivity thresholds of SRAM memory chips of different technologies will increase with the increase of temperature,and the sensitivity threshold of SOI technology after 100 MHz is generally larger than that of Si technology,which has certain significance for the study of electromagnetic compatibility of SOI and Si technologies integrated circuits in high and low temperature environments. |
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| Keywords: | bulk silicon silicon on insulator static random access memory direct power injection electromagnetic sensitivity temperature effect |
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