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Ferroelectric‐Driven Performance Enhancement of Graphene Field‐Effect Transistors Based on Vertical Tunneling Heterostructures
Authors:Shuoguo Yuan  Zhibin Yang  Chao Xie  Feng Yan  Jiyan Dai  Shu Ping Lau  Helen L. W. Chan  Jianhua Hao
Affiliation:1. Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China;2. The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, P. R. China
Abstract:
Keywords:2D materials  ferroelectric thin films  field‐effect transistors  graphene  pulsed laser deposition
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