| 低N含量GaAsN材料的共振喇曼散射及其带边以上的光致发光光谱 |
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| 引用本文： | 谭平恒,罗向东,葛惟昆,徐仲英,Zhang Y,Mascarenhas A,Xin H P,Tu C W. 低N含量GaAsN材料的共振喇曼散射及其带边以上的光致发光光谱[J]. 半导体学报, 2006, 27(3): 397-402 |
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| 作者姓名： | 谭平恒 罗向东 葛惟昆 徐仲英 Zhang Y Mascarenhas A Xin H P Tu C W |
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| 作者单位： | 中国科学院半导体研究所,超晶格国家重点实验室,北京,100083;香港科技大学物理系,香港;南通大学理学院江苏省光用集成电路设计重点实验室,南通,226007;香港科技大学物理系,香港;National Renewable Energy Laboratory,Golden,Colorado 80401,USA;Department of Electrical and Computer Engineering,University of California at San Diego,La Jolla,California 92093,USA |
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| 基金项目： | 中国科学院资助项目，科技部科研项目，江苏省自然科学基金，新世纪优秀人才支持计划，美国ODE基金 |
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| 摘 要： | 利用显微光致发光技术,观测到了N含量为0.1%,0.22%,0.36%和0.62%的GaAsN合金的E0,E0+△0和E+能级的光致发光峰.共振喇曼散射谱进一步证实了这些发光峰来源于所研究材料的本征能级,而不是来源于GaAsN合金中的一些局域激子发射.随着N组分的增加,E0+△0和E+能级分别向低能和高能方向移动并在N组分为0.16%时发生交错.文中提出了一种少量等电子掺杂和显微光致发光谱相结合的方法来直接观测半导体材料带边以上的跃迁能级,尽管光致发光谱通常没有用来观测这些能级位置.
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| 关 键 词： | GaAsN 共振喇曼散射 光致发光 带隙 等电子掺杂 |
| 收稿时间： | 2015-08-20 |
Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys |
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| Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, Mascarenhas A, Xin H P, Tu C W. Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys[J]. Journal of Semiconductors, 2006, In Press. Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, Mascarenhas A, Xin H P, Tu C W. Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys[J]. Chin. J. Semicond., 2006, 27(3): 397.Export: BibTex EndNote |
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| Authors: | Tan P H Luo X D Ge W K Xu Z Y Zhang Y Mascarenhas A Xin H P Tu C W |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Department of Physics,Hong Kong University of Science and Technology,Hong Kong, China;Jiangsu Provincial Key Laboratory of ASIC Design, Nantong University, Nantong 226007, China;Department of Physics,Hong Kong University of Science and Technology,Hong Kong, China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Renewable Energy Laboratory,Golden,Colorado 80401,USA;National Renewable Energy Laboratory,Golden,Colorado 80401,USA;Department of Electrical and Computer Engineering,University of California at San Diego,La Jolla,California 92093,USA;Department of Electrical and Computer Engineering,University of California at San Diego,La Jolla,California 92093,USA |
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| Abstract: | The transitions of E0, E0 +△0, and E+ in dilute GaAs1-x Nx alloys with x = 0.10% ,0.22% ,0.36% ,and0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E+ and E0 +△0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronicdoping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence. |
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| Keywords: | GaAsN resonant Raman scattering photoluminescence bandgap isoelectronic doping |
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