|
|||||
|
|
Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017) |
|
| Authors: | Chao Li Bin Gao Yuan Yao Xiangxiang Guan Xi Shen Yanguo Wang Peng Huang Lifeng Liu Xiaoyan Liu Junjie Li Changzhi Gu Jinfeng Kang Richeng Yu |
| Affiliation: | 1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China;2. Institute of Microelectronics, Peking University, Beijing, P. R. China;3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, P. R. China |
| Abstract: | |
| Keywords: | electron holography energy‐filtered image in situ TEM oxygen vacancies resistive switching |