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Memory Devices: In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device (Adv. Mater. 47/2015) |
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| Authors: | He Tian Haiming Zhao Xue‐Feng Wang Qian‐Yi Xie Hong‐Yu Chen Mohammad Ali Mohammad Cheng Li Wen‐Tian Mi Zhi Bie Chao‐Hui Yeh Yi Yang H.‐S. Philip Wong Po‐Wen Chiu Tian‐Ling Ren |
| Affiliation: | 1. Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China;2. Department of Electrical Engineering and Stanford System X Alliance, Stanford University, Stanford, CA, USA;3. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan |
| Abstract: | |
| Keywords: | bilayer graphene gate controlled in situ resistive memory switching windows |