Carbon‐Nanotube‐Confined Vertical Heterostructures with Asymmetric Contacts |
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| Authors: | Jin Zhang Kenan Zhang Bingyu Xia Yang Wei Dongqi Li Ke Zhang Zhixing Zhang Yang Wu Peng Liu Xidong Duan Yong Xu Wenhui Duan Shoushan Fan Kaili Jiang |
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| Affiliation: | 1. State Key Laboratory of Low‐Dimensional Quantum Physics, Department of Physics and Tsinghua‐Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, China;2. State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan, China;3. RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan;4. Collaborative Innovation Center of Quantum Matter, Beijing, China |
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| Abstract: | Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon‐nanotube‐confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single‐walled carbon nanotube (SWCNT) and a metal electrode. By using WSe2 and MoS2, the CCVH can be made into p‐type and n‐type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe2 CCVH from unipolar to bipolar, and the transition of WSe2/MoS2 from p–n junction to n–n junction under proper source–drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano‐optoelectronics. |
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| Keywords: | 2D materials asymmetric contacts carbon nanotubes heterostructures |
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