Intramolecular Locked Dithioalkylbithiophene‐Based Semiconductors for High‐Performance Organic Field‐Effect Transistors |
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| Authors: | Sureshraju Vegiraju Bo‐Chin Chang Pragya Priyanka Deng‐Yi Huang Kuan‐Yi Wu Long‐Huan Li Wei‐Chieh Chang Yi‐Yo Lai Shao‐Huan Hong Bo‐Chun Yu Chien‐Lung Wang Wen‐Jung Chang Cheng‐Liang Liu Ming‐Chou Chen Antonio Facchetti |
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| Affiliation: | 1. Department of Chemistry, National Central University, Taoyuan, Taiwan;2. Department of Chemical and Materials Engineering, National Central University, Taoyuan, Taiwan;3. Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan;4. Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA |
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| Abstract: | New 3,3′‐dithioalkyl‐2,2′‐bithiophene ( SBT )‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)?S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′‐dialkyl‐2,2′‐bithiophene, the resulting SBT systems are planar (torsional angle <1°) and highly π‐conjugated. Charge transport is investigated for solution‐sheared films in field‐effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm2 V?1 s?1. Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X‐ray diffraction experiments. |
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| Keywords: | dithienothiophene dithioalkylbithiophene organic field‐effect transistors solution‐shearing |
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