| 新型多栅全耗尽SOI器件研究进展 |
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| 引用本文： | 蔡小五,海潮和,周华杰. 新型多栅全耗尽SOI器件研究进展[J]. 电子器件, 2007, 30(3): 841-845 |
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| 作者姓名： | 蔡小五 海潮和 周华杰 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 随着器件尺寸的不断缩小,对更大驱动电流和更有效抑制短沟道效应器件的研制成为研究的热点,SOI多栅全耗尽器件由于对沟道更好控制能力能够有效地解决尺寸缩小带来的短沟道效应问题[1].本文主要介绍SOI/MOSFET单栅、平面双栅、FinFET、三栅、环绕栅、G4-FET等新型多栅全耗尽SOI器件的研究进展.
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| 关 键 词： | 全耗尽 SOI 多栅 |
| 文章编号： | 1005-9490（2007）03-0841-05 |
| 修稿时间： | 2006-06-15 |
Overview of Multiple-Gate Fully Depleted SOI MOSFETs |
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| CAI Xiao-wu,HAI Chao-he,ZHOU Hua-jie. Overview of Multiple-Gate Fully Depleted SOI MOSFETs[J]. Journal of Electron Devices, 2007, 30(3): 841-845 |
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| Authors: | CAI Xiao-wu HAI Chao-he ZHOU Hua-jie |
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| Affiliation: | Institute of Microelectronics of Chinese Academy and Sciences, Beijing 100029, China |
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| Abstract: | With the reduction of critical dimension, the device that have higher driving ability and good short channel effect is one of the focuses and multiple-gate fully depleted SOI MOSFET can resolve this problem effectively due to better control ability in the channel. Novel SOI/MOSFET single gate, planar double gate, FinFET, triple gate, surrounding gate and G^4-FET are introduced here. |
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| Keywords: | fully depleted SOI multiple-gate |
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