Chemical Strain Engineering of Magnetism in Oxide Thin Films |
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Authors: | Olivier Copie Julien Varignon Hélène Rotella Gwladys Steciuk Philippe Boullay Alain Pautrat Adrian David Bernard Mercey Philippe Ghosez Wilfrid Prellier |
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Affiliation: | 1. Normandie Univ., ENSICAEN, UNICAEN, CNRS, CRISMAT, Caen, Cedex 4, France;2. Institut Jean Lamour, UMR 7198 CNRS‐Université de Lorraine, Vand?uvre‐lès‐Nancy, France;3. Theoretical Materials Physics, Q‐MAT, CESAM, Université de Liège, Sart Tilman, Belgium;4. Unité Mixte de Physique UMR 137 CNRS/Thales, Palaiseau, France;5. Université Paris‐Sud, Orsay, France |
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Abstract: | Transition metal oxides having a perovskite structure form a wide and technologically important class of compounds. In these systems, ferroelectric, ferromagnetic, ferroelastic, or even orbital and charge orderings can develop and eventually coexist. These orderings can be tuned by external electric, magnetic, or stress field, and the cross‐couplings between them enable important multifunctional properties, such as piezoelectricity, magneto‐electricity, or magneto‐elasticity. Recently, it has been proposed that additional to typical fields, the chemical potential that controls the concentration of ion vacancies in these systems may reveal an efficient alternative parameter to further tune their properties and achieve new functionalities. In this study, concretizing this proposal, the authors show that the control of the content of oxygen vacancies in perovskite thin films can indeed be used to tune their magnetic properties. Growing PrVO3 thin films epitaxially on an SrTiO3 substrate, the authors reveal a concrete pathway to achieve this effect. The authors demonstrate that monitoring the concentration of oxygen vacancies through the oxygen partial pressure or the growth temperature can produce a substantial macroscopic tensile strain of a few percent. In turn, this strain affects the exchange interactions, producing a nontrivial evolution of Néel temperature in a range of 30 K. |
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Keywords: | chemical strain oxygen vacancies perovskite strongly correlated oxides thin film |
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