| 钨掺杂二氧化钒薄膜的THz波段相变性能的研究 |
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| 引用本文： | 毛茂,黄婉霞,张雅鑫,颜家振,罗轶,施奇武,蔡靖涵. 钨掺杂二氧化钒薄膜的THz波段相变性能的研究[J]. 无机材料学报, 2012, 27(8): 891-896. DOI: 10.3724/SP.J.1077.2012.12131 |
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| 作者姓名： | 毛茂 黄婉霞 张雅鑫 颜家振 罗轶 施奇武 蔡靖涵 |
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| 作者单位： | (1. 四川大学 材料科学与工程学院, 成都610064; 2. 电子科技大学 物理电子学院, 成都610054) |
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| 基金项目： | National Natural Science Foundation of China(61072036) |
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| 摘 要： | 通过溶胶–凝胶法制备纯的VO2和W掺杂的VO2薄膜, 并且进行了XPS、AFM和XRD的分析与表征, 并观察了其微观形貌和结构. 同时研究了VO2和W掺杂VO2在红外光谱(λ=4 μm)和THz(0.3~1.0 THz)区域的金属–绝缘转变性能. 结果表明: 室温下W掺杂的VO2薄膜在红外和THz区域的初始透过率都比纯的VO2薄膜低. 在THz波段, W掺杂的VO2表现出更低的相变温度. 同时在VO2和W掺杂VO2相变过程中, 观察到了金属–绝缘转变和结构转变的现象, W掺杂VO2具有明显的峰位偏移现象.
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| 关 键 词： | 二氧化钒 红外透过率 太赫兹 钨掺杂 |
| 收稿时间： | 2012-03-05 |
| 修稿时间： | 2012-04-23 |
Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range |
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| MAO Mao,HUANG Wan-Xia,ZHANG Ya-Xin,YAN Jia-Zhen,LUO Yi,SHI Qi-Wu,CAI Jing-Han. Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range[J]. Journal of Inorganic Materials, 2012, 27(8): 891-896. DOI: 10.3724/SP.J.1077.2012.12131 |
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| Authors: | MAO Mao HUANG Wan-Xia ZHANG Ya-Xin YAN Jia-Zhen LUO Yi SHI Qi-Wu CAI Jing-Han |
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| Affiliation: | (1. College of Material Science and Engineering, Sichuan University, Chengdu 610064, China; 2. College of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China) |
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| Abstract: | Vanadium dioxide and tungsten-doped (W-doped) vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques (i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction), to determine their morphology and microstructure. Their metal-to-insulator (MIT) phase transition behavior in infrared spectral region (λ=4 μm) and terahertz (THz) spectral region (0.3–1.0 THz) were observed respectivele. The results demonstrate that the transmittance of W-doped VO 2 film at room temperature is visibly lower than that of undoped VO 2 film in both infrared and terahertz spectral region. The transition temperature of W-doped VO 2 film is also lower than that of undoped VO 2 film in the THz range. The MIT and structural phase transition (SPT) are observed during the phase transition of VO 2 and W-doped VO 2 , and an obvious change of peak position occurs in W-doped VO 2 film. |
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| Keywords: | vanadium dioxide infrared transmittance terahertz tungsten doped |
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