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纳秒脉冲半导体激光驱动器的研究
引用本文:刘旭升,林久令,张海明,王晋疆. 纳秒脉冲半导体激光驱动器的研究[J]. 激光技术, 2006, 30(4): 445-448
作者姓名:刘旭升  林久令  张海明  王晋疆
作者单位:天津工业大学,理学院,天津,300160;天津大学,精密仪器与光电子工程学院,光电信息技术科学教育部重点实验室,天津,300072
摘    要:为了获得高功率、高重复频率的纳秒级光脉冲,介绍了一种基于Marx bank脉冲发生原理的纳秒脉冲激光驱动器的设计,以及设计过程中雪崩晶体管的选取.该驱动器采用一级小雪崩管对触发脉冲进行陡化,由小雪崩管产生的脉冲对Marx bank电路进行触发,以获得大电流窄脉冲,用于驱动半导体激光器.设计所得驱动器的峰值电流为12.5A、半峰全宽为1.51ns、重复频率为100kHz,实现了大幅度纳秒脉冲半导体激光驱动器的设计要求.结果表明,对触发脉冲的陡化,可以降低后一级Marx bank电路的雪崩电压,同时使得脉宽更窄,这将更加有利于驱动半导体激光器.

关 键 词:激光器  纳秒  雪崩晶体管  雪崩电压
文章编号:1001-3806(2006)04-0445-04
收稿时间:2005-04-29
修稿时间:2005-12-06

The study of nanosecond pulsed diode laser driver
LIU Xu-sheng,LIN Jiu-ling,ZHANG Hai-ming,WANG Jin-jiang. The study of nanosecond pulsed diode laser driver[J]. Laser Technology, 2006, 30(4): 445-448
Authors:LIU Xu-sheng  LIN Jiu-ling  ZHANG Hai-ming  WANG Jin-jiang
Affiliation:1. Science Institute, Tianjin Polytechnic University, Tianjin 300160, China; 2. Key Laboratory of Optoelectronics Information Technical Science of Ministry of Education,College of Precise Instrument and Optical Electronic Engineering,Tianjin University, Tianjin 300072 ,China
Abstract:In order to obtain the nanosecond optical pulse with high power and high repetition frequency,a LD's driver which can produce pulse with nanosecond rise time is designed.The generator is based on the avalanche transistors in a Marx bank circuit.The selection of the avalanche transistors is also described in detail.This driver uses a transistor which has a low avalanche voltage to sharp the trigger pulse,and then use the pulse which is obtained from this transistor to trigger the Marx bank circuit.A large current narrow-pulse for driving the LD can be obtained.This driver can produce a large-amplitude nanosecond pulse and its peak current is up to 12.5A with pulse width of 1.51ns,pulse repetition frequency of 100kHz.It is consequenced that sharping the trigger pulse can reduce the avalanche voltage of the Marx bank circuit and narrow the width of the output pulse.It is more suitable for driving the LD.
Keywords:lasers  nanosecond  avalanche transistor  avalanche voltage
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