皮秒激光功率变化对激光诱导晶体硅变化的影响 |
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引用本文: | 杨成娟,梅雪松,王文君,田延岭,张大卫,崔良玉. 皮秒激光功率变化对激光诱导晶体硅变化的影响[J]. 红外与激光工程, 2016, 45(1): 106006-0106006(7). DOI: 10.3788/IRLA201645.0106006 |
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作者姓名: | 杨成娟 梅雪松 王文君 田延岭 张大卫 崔良玉 |
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作者单位: | 1.天津大学 机械工程学院,天津 300072; |
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基金项目: | 国家自然科学基金(51405333,51175372,51275337);天津大学自主创新基金(1405); 天津市装备设计与制造技术重点实验室(天津大学)开放课题 |
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摘 要: | 为了深入了解皮秒激光烧蚀对晶体硅所造成的影响,使用不同平均功率下的皮秒脉冲激光辐照晶体硅,然后使用X射线光电子能谱仪和透射电子显微镜,分别对被烧蚀晶体硅的化学成分与微观组织结构进行观察与分析。研究发现:随着激光脉冲平均功率的增加,烧蚀产物中晶体硅的相对含量不断下降,而SiO2的相对含量则逐步上升;与此同时,材料的无定形化程度也随之加剧。最终认为:因激光脉冲平均功率增加而逐渐升高的激光能量密度是诱导上述实验结果出现的主要原因,并最终不断扩大并加剧着材料所受到热与机械损伤的范围与程度。
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关 键 词: | 晶体硅 皮秒激光 激光脉冲功率变化 化学成分 微观组织结构 |
收稿时间: | 2015-05-13 |
Influence of laser power variation on laser-induced changes of crystalline silicon |
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Affiliation: | 1.School of Mechanical Engineering,Tianjin University,Tianjin 300072,China;2.Key Laboratory of Mechanism Theory and Equipment Design of Ministry of Education,Tianjin University,Tianjin 300072,China;3.School of Mechanical Engineering,Xi'an Jiaotong University,Xi'an 710049,China |
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Abstract: | In order to understand the influence of picosecond laser irradiation on crystalline silicon, laser-induced changes of crystalline silicon by picosecond laser ablation with different average laser powers were studied. Then X-ray photoelectron spectroscopy and transmission electron microscope were used to analyze the influence of average laser power variation on final chemical composition and microstructure of the ablated silicon, respectively. It is concluded that, with the increase of average laser power, the relative content of Si in ablation product keeps falling, by contrast, the relative content of SiO2 gradually rises. At the same time, the increase of average laser power intensifies the amorphization degree of microstructure of ablated silicon. Finally, it is deduced that the increased laser fluence resulted from average laser power increasing is the main reason for all of above experimental results, and also to enlarge and deepen the thermal and mechanical damages in ablated silicon. |
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