| 一种有机薄膜器件的制备及电存储特性 |
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| 引用本文： | 郭鹏,季欣,董元伟,吕银祥,徐伟. 一种有机薄膜器件的制备及电存储特性[J]. 半导体学报, 2008, 29(1): 140-143 |
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| 作者姓名： | 郭鹏 季欣 董元伟 吕银祥 徐伟 |
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| 作者单位： | 复旦大学材料科学系,上海,200433 |
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| 基金项目： | 教育部跨世纪优秀人才培养计划，国家自然科学基金，上海纳米技术专项基金 |
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| 摘 要： | 研究了一种金属/有机物/金属夹层结构有机薄膜器件的可逆电双稳特性.器件的阳极和阴极分别为真空热蒸发沉积的Ag和Al薄膜,中间介质层为真空热蒸发沉积的2-(hexahydropyrimidin-2-ylidene)-malononitrile(HPYM)有机薄膜.器件起始状态为非导通态,在大气环境下,可用正、反向电场进行信号的写入和擦除,表现为极性记忆特性.通过自然氧化的方法在底电极Al表面形成一层Al2O3薄膜层后,可使器件在不同的正向电压脉冲作用下达到不同的导电态,具有一定的多重态存储特性.同时,研究了不同的电极组合对器件电性能的影响,并通过紫外-可见吸收光谱以及喇曼光谱对器件界面进行表征.
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| 关 键 词： | 有机薄膜器件 存储器 电双稳特性 多重态导电特性 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-08-03 |
Fabrication and Memory Characteristics of a New Organic Thin Film Device |
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| Guo Peng, Ji Xin, Dong Yuanwei, Lü Yinxiang, Xu Wei. Fabrication and Memory Characteristics of a New Organic Thin Film Device[J]. Journal of Semiconductors, 2008, In Press. Guo P, Ji X, Dong Y W, Lü Y, Xu W. Fabrication and Memory Characteristics of a New Organic Thin Film Device[J]. J. Semicond., 2008, 29(1): 140.Export: BibTex EndNote |
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| Authors: | Guo Peng Ji Xin Dong Yuanwei Lü Yinxiang Xu Wei |
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| Affiliation: | Department of Materials Science,Fudan University,Shanghai 200433,China;Department of Materials Science,Fudan University,Shanghai 200433,China;Department of Materials Science,Fudan University,Shanghai 200433,China;Department of Materials Science,Fudan University,Shanghai 200433,China;Department of Materials Science,Fudan University,Shanghai 200433,China |
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| Abstract: | The reversible electrical bistability of a new organic thin film device with a metal/organic/metal sandwich structure is investigated.The anode and cathode metals of the device are Ag and Al,respectively,and were fabricated by vacuum evaporation.The middle medium is 2-(hexahydropyrimidin-2-ylidene)-malononitrile (HPYM).The device,which has polar memory characteristics,can be written from a low-conductance state to a high-conductance state by a voltage pulse and can be erased by a reverse voltage.The device with a thin Al2O3 layer between base metal Al and HPYM can produce different high-conductance states through the application of different positive voltages,resulting in multilevel memory capability.The effect of different electrode combinations on conductance switching devices is studied and UV-Vis absorption spectra and Raman spectra are used to obtain information on the interfaces of the devices. |
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| Keywords: | organic film device memory device electrical bistability multilevel conductance |
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