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| PdSe2半导体薄膜的真空硒化法制备研究 | |
| 引用本文： | 王慧,张淑娟,陈亭伟,张传林,罗豪甦,郑仁奎. PdSe2半导体薄膜的真空硒化法制备研究[J]. 无机材料学报, 2021, 36(7): 779-784. DOI: 10.15541/jim20200540 |
| 作者姓名： | 王慧 张淑娟 陈亭伟 张传林 罗豪甦 郑仁奎 |
| 作者单位： | 1.南昌大学 材料科学与工程学院, 江西省先进功能薄膜材料工程实验室, 南昌 330031 2.中国科学院 上海硅酸盐研究所, 上海 200050 3.江西科技师范大学 材料机械工程学院, 南昌 330038 |
| 摘 要： | PdSe2薄膜主要通过机械剥离法和气相沉积法制得,本研究采用一种简单有效的可在SiO2/Si衬底上制备PdSe2薄膜的方法.通过高真空磁控溅射技术在SiO2/Si衬底上沉积一层Pd金属薄膜,将Pd金属薄膜与Se粉封在高真空的石英管中并在一定的温度下进行硒化,获得PdSe2薄膜.根据截面高分辨透射电镜(HRTEM)照片可... |
| 关 键 词： | 贵金属硫族化合物 硒化 电输运性能 磁阻 |
| 收稿时间： | 2020-09-15 |
| 修稿时间： | 2020-10-11 |
Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films |
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| WANG Hui,ZHANG Shujuan,CHEN Tingwei,ZHANG Chuanlin,LUO Haosu,ZHENG Renkui. Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films[J]. Journal of Inorganic Materials, 2021, 36(7): 779-784. DOI: 10.15541/jim20200540 | |
| Authors: | WANG Hui ZHANG Shujuan CHEN Tingwei ZHANG Chuanlin LUO Haosu ZHENG Renkui |
| Affiliation: | 1. Jiangxi Engineering Laboratory for Advanced Functional Thin Films, School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China 2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China 3. School of Materials, Mechanic, and Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, China |
| Abstract: | At present, the approaches to fabricate PdSe2 thin films mainly focus on mechanical exfoliation and chemical vapor deposition. In this study, we report a simple and efficient method to fabricate PdSe2 thin films on SiO2/Si substrates. Firstly, a Pd metal layer was deposited on a SiO2/Si substrate using magnetron sputtering. Then the PdSe2 thin film was obtained through selenization of the Pd layer at certain temperatures in a vacuum quartz ampule containing Se powder. According to the cross-sectional high-resolution transmission electron microscopy (HRTEM) image, the as-grown PdSe2 thin film has an average thickness of about 30 nm. The correlation between selenization temperature and electronic transport properties of PdSe2 thin films was investigated. PdSe2 thin films with a hole carrier concentration of ~1018 cm-3 and a mobility of ~48.5 cm2·V-1·s-1 are realized at a low selenization temperature of 300 ℃. It is worth noting that the mobility obtained by the vacuum selenization is superior to that of the p-type PdSe2 thin films fabricated by mechanical exfoliation from bulk PdSe2 single crystals. In addition, a relatively large room-temperature magnetoresistance (MR) of 12% is achieved for the PdSe2 thin films selenized at 300 ℃. With the increase in the selenization temperature from 300 ℃, mobility and magnetoresistance decrease due to the evaporation of Se element at high temperatures. This work demonstrates that present one-step selenization process is a facile and efficient approach to synthesize PdSe2 films, which could actually be used to prepare PdSe2 films in a large scale and may have potential applications for next-generation electronic and magneto-electronic devices. |
| Keywords: | noble metal dichalcogenide selenization electronic transport property magnetoresistance |
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